Battery-based neural network weights

ABSTRACT

Methods for controlling the resistance of a controllable resistive element include determining an amount of electrical resistance change for the controllable resistive element. A concentration difference is determined for a charge carrier ion in a resistor layer of the controllable resistance element that corresponds to the electrical resistance change for the controllable resistive element. A duration and amplitude of a current pulse is determined that changes the charge carrier ion concentration by the determined difference. A positive or negative current pulse is applied to a controllable resistive element for the determined duration.

BACKGROUND Technical Field

The present invention generally relates to neural networks and, moreparticularly, to the use of batteries to control weights in anartificial neural network.

Description of the Related Art

An artificial neural network (ANN) is an information processing systemthat is inspired by biological nervous systems, such as the brain. Thekey element of ANNs is the structure of the information processingsystem, which includes a large number of highly interconnectedprocessing elements (called “neurons”) working in parallel to solvespecific problems. ANNs are furthermore trained in-use, with learningthat involves adjustments to weights that exist between the neurons. AnANN is configured for a specific application, such as patternrecognition or data classification, through such a learning process.

Referring now to FIG. 1, a generalized diagram of a neural network isshown. ANNs demonstrate an ability to derive meaning from complicated orimprecise data and can be used to extract patterns and detect trendsthat are too complex to be detected by humans or other computer-basedsystems. The structure of a neural network is known generally to haveinput neurons 102 that provide information to one or more “hidden”neurons 104. Connections 108 between the input neurons 102 and hiddenneurons 104 are weighted and these weighted inputs are then processed bythe hidden neurons 104 according to some function in the hidden neurons104, with weighted connections 108 between the layers. There may be anynumber of layers of hidden neurons 104, and as well as neurons thatperform different functions. There exist different neural networkstructures as well, such as convolutional neural network, maxoutnetwork, etc. Finally, a set of output neurons 106 accepts and processesweighted input from the last set of hidden neurons 104.

This represents a “feed-forward” computation, where informationpropagates from input neurons 102 to the output neurons 106. Uponcompletion of a feed-forward computation, the output is compared to adesired output available from training data. The error relative to thetraining data is then processed in “feed-back” computation, where thehidden neurons 104 and input neurons 102 receive information regardingthe error propagating backward from the output neurons 106. Once thebackward error propagation has been completed, weight updates areperformed, with the weighted connections 108 being updated to accountfor the received error. This represents just one variety of ANN.

SUMMARY

A method for adjusting the electrical resistance of a controllableresistive element includes determining an amount of electricalresistance change for the controllable resistive element. Aconcentration difference for a charge carrier ion in a resistor layer ofthe controllable resistance element is determined that corresponds tothe electrical resistance change for the controllable resistive element.A duration and amplitude of a current pulse is determined that changesthe charge carrier ion concentration by the determined difference. Apositive or negative current pulse is applied to a controllableresistive element for the determined duration.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a diagram of a neural network;

FIG. 2 is a diagram of a neural network having weights initialized toprovide dedicated neurons for certain states in accordance with thepresent principles;

FIG. 3 is a block diagram of circuitry for reading from, writing to, andtraining a neural network in accordance with the present principles;

FIG. 4 is a side view of a controllable resistive element based on athin-film battery structure in accordance with the present principles;

FIG. 5 is a graph illustrating a relationship between charge carrier iondensity and resistance in a controllable resistance element inaccordance with the present principles;

FIG. 6 is an isometric view of a controllable resistive element inaccordance with the present principles;

FIG. 7 is a top-down view of an array of controllable resistive elementsin accordance with the present principles;

FIG. 8 is a block/flow diagram of a method of controlling a resistanceof a controllable resistive element in accordance with the presentprinciples;

FIG. 9 is a block diagram of a neural network processing system inaccordance with the present principles; and

FIG. 10 is a block diagram of a processing system in accordance with thepresent principles.

DETAILED DESCRIPTION

Embodiments of the present invention implement the weights of anartificial neural network (ANN) using battery chemistry to alter theresistance of a resistive element. The battery structure has a linearrelationship between charge carrier ion concentration in a cathode layerand stored charge for at least part of its operational range. Thisproperty is used to precisely control the charge carrier ionconcentration of the cathode layer, which in turn is used to control anelectrical resistance through the weight element. In addition, theresulting weights are non-volatile and have symmetric bidirectionality,where equal positive and negative current pulses change the state of thebattery in respective directions by equal amounts.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 2, an artificial neuralnetwork (ANN) architecture 200 is shown. It should be understood thatthe present architecture is purely exemplary and that otherarchitectures or types of neural network may be used instead. Duringfeed-forward operation, a set of input neurons 202 each provide an inputvoltage in parallel to a respective row of weights 204. The weights 204each have a settable resistance value, such that a current output flowsfrom the weight 204 to a respective hidden neuron 206 to represent theweighted input. The current output by a given weight is determined asI=v/r, where V is the input voltage from the input neuron 202 and r isthe set resistance of the weight 204. The current from each weight addscolumn-wise and flows to a hidden neuron 206. A set of reference weights207 have a fixed resistance and combine their outputs into a referencecurrent that is provided to each of the hidden neurons 206. Becauseconductance values can only be positive numbers, some referenceconductance is needed to encode both positive and negative values in thematrix. The currents produced by the weights 204 are continuously valuedand positive, and therefore the reference weights 207 are used toprovide a reference current, above which currents are considered to havepositive values and below which currents are considered to have negativevalues. The reference weight 207 can also be attach outside of thearray, where computation is done between an output of input layer to aninput of hidden layer.

As an alternative to using the reference weights 207, another embodimentmay use separate arrays of weights 204 to capture negative values. Eachapproach has advantages and disadvantages. Using the reference weights207 is more efficient in chip area, but reference values need to bematched closely to one another. In contrast, the use of a separate arrayfor negative values does not involve close matching as each value has apair of weights to compare against. However, the negative weight matrixapproach uses roughly twice the chip area as compared to the singlereference weight column. In addition, the reference weight columngenerates a current that needs to be copied to each neuron forcomparison, whereas a negative matrix array provides a reference valuedirectly for each neuron. In the negative array embodiment, the weights204 of both positive and negative arrays are updated, but this alsoincreases signal-to-noise ratio as each weight value is a difference oftwo conductance values. The two embodiments provide identicalfunctionality in encoding a negative value and those having ordinaryskill in the art will be able to choose a suitable embodiment for theapplication at hand.

The hidden neurons 206 use the currents from the array of weights 204and the reference weights 207 to perform some calculation. The hiddenneurons 206 then output a voltage of their own to another array ofweights 207. This array performs in the same way, with a column ofweights 204 receiving a voltage from their respective hidden neuron 206to produce a weighted current output that adds row-wise and is providedto the output neuron 208.

It should be understood that any number of these stages may beimplemented, by interposing additional layers of arrays and hiddenneurons 206. It should also be noted that some neurons may be constantneurons 209, which provide a constant voltage to the array. The constantneurons 209 can be present among the input neurons 202 and/or hiddenneurons 206 and are only used during feed-forward operation.

During back propagation, the output neurons 208 provide a voltage backacross the array of weights 204. The output layer compares the generatednetwork response to training data and computes an error. The error isapplied to the array as a voltage pulse, where the height and/orduration of the pulse is modulated proportional to the error value. Inthis example, a row of weights 204 receives a voltage from a respectiveoutput neuron 208 in parallel and converts that voltage into a currentwhich adds column-wise to provide an input to hidden neurons 206. Thehidden neurons 206 provide combine the weighted feedback signal with aderivative of its feed-forward calculation and stores an error valuebefore outputting a feedback signal voltage to its respective column ofweights 204. This back propagation travels through the entire network200 until all hidden neurons 206 and the input neurons 202 have storedan error value.

During weight updates, the input neurons 202 and hidden neurons 206apply a first weight update voltage forward and the output neurons 208and hidden neurons 206 apply a second weight update voltage backwardthrough the network 200. The combinations of these voltages create astate change within each weight 204, causing the weight 204 to take on anew resistance value. In this manner the weights 204 can be trained toadapt the neural network 200 to errors in its processing. It should benoted that the three modes of operation, feed forward, back propagation,and weight update, do not overlap with one another.

Referring now to FIG. 3, a block diagram of a neuron 300 is shown. Thisneuron may represent any of the input neurons 202, the hidden neurons206, or the output neurons 208. It should be noted that FIG. 3 showscomponents to address all three phases of operation: feed forward, backpropagation, and weight update. However, because the different phases donot overlap, there will necessarily be some form of control mechanismwithin in the neuron 300 to control which components are active. Itshould therefore be understood that there may be switches and otherstructures that are not shown in the neuron 300 to handle switchingbetween modes.

In feed forward mode, a difference block 302 determines the value of theinput from the array by comparing it to the reference input. This setsboth a magnitude and a sign (e.g., + or −) of the input to the neuron300 from the array. Block 304 performs a computation based on the input,the output of which is stored in storage 305. It is specificallycontemplated that block 304 computes a non-linear function and may beimplemented as analog or digital circuitry or may be performed insoftware. The value determined by the function block 304 is converted toa voltage at feed forward generator 306, which applies the voltage tothe next array. The signal propagates this way by passing throughmultiple layers of arrays and neurons until it reaches the final outputlayer of neurons. The input is also applied to a derivative of thenon-linear function in block 308, the output of which is stored inmemory 309.

During back propagation mode, an error signal is generated. The errorsignal may be generated at an output neuron 208 or may be computed by aseparate unit that accepts inputs from the output neurons 208 andcompares the output to a correct output based on the training data.Otherwise, if the neuron 300 is a hidden neuron 206, it receives backpropagating information from the array of weights 204 and compares thereceived information with the reference signal at difference block 310to provide a continuously valued, signed error signal. This error signalis multiplied by the derivative of the non-linear function from theprevious feed forward step stored in memory 309 using a multiplier 312,with the result being stored in the storage 313. The value determined bythe multiplier 312 is converted to a backwards propagating voltage pulseproportional to the computed error at back propagation generator 314,which applies the voltage to the previous array. The error signalpropagates in this way by passing through multiple layers of arrays andneurons until it reaches the input layer of neurons 202.

During weight update mode, after both forward and backward passes arecompleted, each weight 204 is updated proportional to the product of thesignal passed through the weight during the forward and backward passes.The update signal generators 316 provide voltage pulses in bothdirections (though note that, for input and output neurons, only onedirection will be available). The shapes and amplitudes of the pulsesfrom update generators 316 are configured to change a state of theweights 204, such that the resistance of the weights 204 is updated.

In some embodiments, the weights 204 may be implemented in software orin hardware, using relatively complicated weighting circuitry or usingresistive cross point devices. Such resistive devices may have switchingcharacteristics that have a non-linearity that can be used forprocessing data. The weights 204 may belong to a class of device calleda resistive processing unit (RPU) and may be used to performcalculations in the neural network 200. The RPU devices may beimplemented with resistive random access memory (RRAM), phase changememory (PCM), programmable metallization cell (PMC) memory, or any otherdevice that has non-linear resistive switching characteristics. It isparticularly contemplated that the RPU devices may be implemented asvoltage-controlled resistors with the voltage being set by charge storedon a battery. Such RPU devices may also be considered as memristivesystems.

Referring now to FIG. 4, a side view of an exemplary weight 204structure is shown. A shared read/write electrode 404 is formed on asubstrate 402. Although it is specifically contemplated that thesubstrate 402 may be a semiconductor substrate, and although the presentembodiments are specifically directed to such a structure, it should beunderstood that alternative substrate materials may include, e.g.,glass, sapphire, or any other appropriate, non-conductive material thatis resistant to charge carrier ion diffusion. A semiconductor substratemay be a bulk-semiconductor substrate. In one example, thebulk-semiconductor substrate may be a silicon-containing material.Illustrative examples of silicon-containing materials suitable for thebulk-semiconductor substrate include, but are not limited to, silicon,silicon germanium, silicon germanium carbide, silicon carbide,polysilicon, epitaxial silicon, amorphous silicon, and multi-layersthereof. Although silicon is the predominantly used semiconductormaterial in wafer fabrication, alternative semiconductor materials canbe employed, such as, but not limited to, germanium, gallium arsenide,gallium nitride, cadmium telluride, and zinc selenide. Although notdepicted in the present figures, the semiconductor substrate may also bea semiconductor on insulator (SOI) substrate.

The shared electrode 404 may be formed from any appropriate conductingmaterial that does not react with a charge carrier ions in the batterystructure. In embodiments that employ lithium ion chemistries, theshared electrode 404 may be formed from, e.g., nickel, copper, platinum,etc.

A battery stack is formed on the shared electrode 404. In one particularembodiment, the battery stack may form a thin-film lithium ion batterythat includes resistor layer 406. The resistor layer 406 may be formedfrom an appropriate lithium-containing material such as, e.g., LiCoO₂,LiNbO₃, LiMnO₂, LiV₂O₅, LiFePO₄, LiNi_(x)Mn_(y)Co_(z), V₂O₅—LiBO₂,Li₄Ti₅O₁₂, Li_(x)Al, Li_(x)C, or Li_(x)Si may be used instead. Thematerial of the resistor layer 406 should have an electrical resistivitycontrolled by its charge carrier ion concentration, which characterizesthe resistance of the cell as the stored charge changes.

An electrolyte layer 408 separate the resistor layer 406 from areservoir layer 410. It is specifically contemplated that theelectrolyte layer 408 may be formed from a solid electrolyte materialsuch as, e.g., lithium phosphorous oxy-nitride (LiPON), but alternativematerials may be used instead. In other embodiments, an organicmaterial-based electrolyte may be used in conjunction with anon-conductive separator between the resistor layer 406 and thereservoir layer 410. The electronic conductivity of the electrolytelayer 408 should be low to improve retention time and, hence, increasestability. The reservoir layer 410 may be formed from any appropriatelithium compound material such as, e.g., LiCoO₂, LiNbO₃, LiMnO₂, LiV₂O₅,LiFePO₄, LiNi_(x)Mn_(y)Co_(z), V₂O₅—LiBO₂, Li₄Ti₅O₁₂, Li₂TiO₃, Li_(x)Al,Li_(x)C, Li, or Li_(x)Si. In an exemplary embodiment, the thickness ofthe resistor layer 406, the electrolyte layer 408, and the reservoirlayer 410 may each be between about 5 nm and about 2 μm.

Each layer of the battery structure may be formed by any appropriatedeposition method including, e.g., chemical vapor deposition (CVD),physical vapor deposition (PVD), atomic layer deposition (ALD), or gascluster ion beam (GCIB) deposition. CVD is a deposition process in whicha deposited species is formed as a result of chemical reaction betweengaseous reactants at greater than room temperature (e.g., from about 25°C. about 900° C.). The solid product of the reaction is deposited on thesurface on which a film, coating, or layer of the solid product is to beformed. Variations of CVD processes include, but are not limited to,Atmospheric Pressure CVD (APCVD), Low Pressure CVD (LPCVD), PlasmaEnhanced CVD (PECVD), and Metal-Organic CVD (MOCVD) and combinationsthereof may also be employed. In alternative embodiments that use PVD, asputtering apparatus may include direct-current sputtering, pulseddirect-current sputtering, radio frequency sputtering, magnetronsputtering, or ionized metal plasma sputtering. In alternativeembodiments that use ALD, chemical precursors react with the surface ofa material one at a time to deposit a thin film on the surface. Inalternative embodiments that use GCIB deposition, a high-pressure gas isallowed to expand in a vacuum, subsequently condensing into clusters.The clusters can be ionized and directed onto a surface, providing ahighly anisotropic deposition.

A write electrode 414 is formed on the reservoir layer 410. The writeelectrode 414 is formed with a conductive material that, like the sharedelectrode 404, does not react with the charge carrier of the reservoirlayer 410. The write electrode 414 may be formed from the same materialas the shared electrode 404 or may be formed from a different conductivematerial.

A read electrode 412 is formed in contact with the resistor layer 406,at a top portion of the resistor layer 406. The read electrode 412 isformed with a conductive material that, like the shared electrode 404and the write electrode 414, does not react with the charge carrier ionsof the resistor layer 406. The read electrode 412 may be formed from thesame material as the shared electrode 404 or the write electrode 414 ormay be formed from a different conductive material.

Conductivity of charge carrier ions through the electrolyte layer 408into a steady state should be fast enough to support the cycle time ofthe neural network, such that changes made to the states of the weights204 settle before a read operation is performed. Furthermore, chargingand discharging times for a given amount of charge should be assymmetric as possible.

Although the thin-film lithium-ion battery chemistry described above canbe made particularly small and is thus suitable for integrating in ahardware-based ANN, other types of batteries may be used instead.Alternative battery chemistries include potassium- or sodium-basedbatteries, nickel-zinc batteries, and rechargeable alkaline batteries.As long as the battery structure supplies predictable voltages relativeto the charge and discharge times supplied by write signals, the batterystructure can be used to control the resistance of the weight 204.

During a write operation, a current pulse is applied between the writeelectrode 414 and the shared electrode 404. The voltage differencebetween the two electrodes causes charge carriers in the resistor layer406 and the reservoir layer 408 to move. If a lithium ion batterychemistry is used, and a lower voltage is present on the write electrode414 than on the shared electrode 404, then positively charged Li+ ionsmove from the resistor layer 406, across the electrolyte layer 408, andinto the reservoir layer 410. If a reverse current pulse is appliedbetween the write electrode 414 and the shared electrode 404, the chargecarrier ions leave the reservoir layer 410 and accumulate in theresistor layer 406. The duration of the current pulse determines howmany charge carrier ions pass through the electrolyte layer 408.

The concentration of charge carriers in the resistor layer 406determines the resistance of the resistor layer 406. As will be shownbelow, a precise correspondence between this concentration x and theresistance can be determined. As a result, the resistance of theresistor layer 406 can be precisely controlled by controlling the chargecarrier ion concentration.

During a read operation, a voltage is applied to the read electrode 412and a current is measured at the shared electrode 404. The current isdetermined by Ohm's law, I=V/R, where V is the voltage applied to theread electrode 412 and R is the resistance of the resistor layer 406.Thus, the measured current and the known read voltage determine theresistance of the resistor layer 406 and thereby the value stored in theweight 204.

Referring now to FIG. 5, a graph of the relationship between lithium ionconcentration and resistivity for an exemplary weight 204 is shown. Inthis particular example, the resistor layer 406 is formed fromLi_(x)CoO₂. The horizontal axis 502 represents the value of x andcharacterizes the relative concentration of lithium ions in the resistorlayer 406. The vertical axis 504 represents the resistivity of theresistor layer 406, measured in ohm-meters. The relationship between theresistivity of the resistor layer 406 and the resistance it presentsduring a read operation on the weight 204 is R=ρ·l/A, where ρ is theresistivity of the material, l is the length of the resistor layer 406along a direction of current flow, and A is a cross-sectional area ofthe resistor layer 406 perpendicular to the direction of current flow.

As can be seen from the graph, using this particular composition in theresistor layer 406, there is a range of lithium ion concentrations onthe line 506 between about 0.9 and about 1 where differentconcentrations can be readily distinguished by the resistivity valuesthey produce. Because the concentration of lithium ions in the resistorlayer 406 can be precisely controlled, the resistivity, and thus theresistance, can similarly be controlled.

Referring now to FIG. 6, a three-dimensional view of the weight 204 isshown. This view emphasizes the positioning and spatial relationships ofthe electrodes. The read electrode 412 and the write electrode 414 aredepicted as being parallel while the shared electrode 404 isperpendicular to the other two electrodes, but it should be understoodthat alternate embodiments may orient the electrodes in any appropriatedirection.

The battery structure, formed from the resistor layer 406, theelectrolyte layer 408, and the reservoir layer 410, is positioneddirectly between the shared electrode 404 and the write electrode 414 ata point where the two electrodes overlap. The read electrode 412 isshown as being in contact with a sidewall of the resistor layer 406 at atop portion of the resistor layer 406. The read electrode 412 should bepositioned on the sidewall to prevent the read electrode 412 frominterfering with the flow of charge carriers into and out of theresistor layer 406.

Referring now to FIG. 7, a top-down view of an array of weights 700 isshown. The battery structures 702 are shown as dotted lines at theoverlapping points between the shared electrodes 404 and the writeelectrodes 414, with the read electrodes 412 being positioned at thesides of the battery structures 702.

Addressing a particular weight 204 for a write operation includesemitting a current pulse between the respective write electrode 414 andthe shared electrode 404 associated with the battery structure 702 inquestion. The charge carrier ions (e.g., lithium ions) make a transitionin the battery structure 702 for the duration of the current pulse,causing the electrical resistance state of the resistor layer in thebattery structure 702 to change. During a read operation for aparticular weight 204, a voltage is applied on the respective readelectrode 412 and a resulting current is measured on the respectiveshared electrode 404. It should be noted that the read operation doesnot change the resistance state of the resistor layer 406—because thepath between the read electrode 412 and the shared electrode 404 passessolely through the resistor layer 406, no charge carrier ions move to orfrom the reservoir layer 410.

Referring now to FIG. 8, a method for writing to the state of a weight204 is shown. This process may be performed during training of an ANN toadjust the values of any weights 204 and to bring the output of the ANNcloser to the expected trained output. Block 802 determines the weightresistance change for each weight 204 that is needed according to adifference between the ANN's output and the expected output from atraining corpus. Block 804 determines how much the concentration ofcharge carrier ions in the resistor layer 406 needs to change to createthe target electrical resistance.

Block 806 determines whether the change in concentration reflects anincrease in the concentration of charge carrier ions in the resistorlayer 406 or a decrease in such concentration. If an increase inconcentration is needed, a current pulse is applied between the writeelectrode 414 and the shared electrode 404. The current pulse has aduration calculated to move the determined concentration of chargecarrier ions from the reservoir layer 410 to the resistor layer 406. Ifa decrease in concentration is needed, a reverse current pulse isapplied between the write electrode 414 and the shared electrode 404.The current pulse has a duration calculated to move the determinedconcentration of charge carriers from the resistor layer 406 and intothe reservoir layer 410.

After the concentration in the resistor layer 406 has either increasedor decreased, block 812 waits for the battery state to settle. Thebattery structure 702 needs a small amount of time for the storedcharges to diffuse to a steady state. Once this time has elapsed, theweight 204 will provide the correct electrical resistance value and canbe used for ANN calculations.

The present invention may be a system, a method, and/or a computerprogram product at any possible technical detail level of integration.The computer program product may include a computer readable storagemedium (or media) having computer readable program instructions thereonfor causing a processor to carry out aspects of the present invention.

The computer readable storage medium can be a tangible device that canretain and store instructions for use by an instruction executiondevice. The computer readable storage medium may be, for example, but isnot limited to, an electronic storage device, a magnetic storage device,an optical storage device, an electromagnetic storage device, asemiconductor storage device, or any suitable combination of theforegoing. A non-exhaustive list of more specific examples of thecomputer readable storage medium includes the following: a portablecomputer diskette, a hard disk, a random access memory (RAM), aread-only memory (ROM), an erasable programmable read-only memory (EPROMor Flash memory), a static random access memory (SRAM), a portablecompact disc read-only memory (CD-ROM), a digital versatile disk (DVD),a memory stick, a floppy disk, a mechanically encoded device such aspunch-cards or raised structures in a groove having instructionsrecorded thereon, and any suitable combination of the foregoing. Acomputer readable storage medium, as used herein, is not to be construedas being transitory signals per se, such as radio waves or other freelypropagating electromagnetic waves, electromagnetic waves propagatingthrough a waveguide or other transmission media (e.g., light pulsespassing through a fiber-optic cable), or electrical signals transmittedthrough a wire.

Computer readable program instructions described herein can bedownloaded to respective computing/processing devices from a computerreadable storage medium or to an external computer or external storagedevice via a network, for example, the Internet, a local area network, awide area network and/or a wireless network. The network may comprisecopper transmission cables, optical transmission fibers, wirelesstransmission, routers, firewalls, switches, gateway computers and/oredge servers. A network adapter card or network interface in eachcomputing/processing device receives computer readable programinstructions from the network and forwards the computer readable programinstructions for storage in a computer readable storage medium withinthe respective computing/processing device.

Computer readable program instructions for carrying out operations ofthe present invention may be assembler instructions,instruction-set-architecture (ISA) instructions, machine instructions,machine dependent instructions, microcode, firmware instructions,state-setting data, or either source code or object code written in anycombination of one or more programming languages, including an objectoriented programming language such as Smalltalk, C++ or the like, andconventional procedural programming languages, such as the “C”programming language or similar programming languages. The computerreadable program instructions may execute entirely on the user'scomputer, partly on the user's computer, as a stand-alone softwarepackage, partly on the user's computer and partly on a remote computeror entirely on the remote computer or server. In the latter scenario,the remote computer may be connected to the user's computer through anytype of network, including a local area network (LAN) or a wide areanetwork (WAN), or the connection may be made to an external computer(for example, through the Internet using an Internet Service Provider).In some embodiments, electronic circuitry including, for example,programmable logic circuitry, field-programmable gate arrays (FPGA), orprogrammable logic arrays (PLA) may execute the computer readableprogram instructions by utilizing state information of the computerreadable program instructions to personalize the electronic circuitry,in order to perform aspects of the present invention.

Aspects of the present invention are described herein with reference toflowchart illustrations and/or block diagrams of methods, apparatus(systems), and computer program products according to embodiments of theinvention. It will be understood that each block of the flowchartillustrations and/or block diagrams, and combinations of blocks in theflowchart illustrations and/or block diagrams, can be implemented bycomputer readable program instructions.

These computer readable program instructions may be provided to aprocessor of a general purpose computer, special purpose computer, orother programmable data processing apparatus to produce a machine, suchthat the instructions, which execute via the processor of the computeror other programmable data processing apparatus, create means forimplementing the functions/acts specified in the flowchart and/or blockdiagram block or blocks. These computer readable program instructionsmay also be stored in a computer readable storage medium that can directa computer, a programmable data processing apparatus, and/or otherdevices to function in a particular manner, such that the computerreadable storage medium having instructions stored therein comprises anarticle of manufacture including instructions which implement aspects ofthe function/act specified in the flowchart and/or block diagram blockor blocks.

The computer readable program instructions may also be loaded onto acomputer, other programmable data processing apparatus, or other deviceto cause a series of operational steps to be performed on the computer,other programmable apparatus or other device to produce a computerimplemented process, such that the instructions which execute on thecomputer, other programmable apparatus, or other device implement thefunctions/acts specified in the flowchart and/or block diagram block orblocks.

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods, and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof instructions, which comprises one or more executable instructions forimplementing the specified logical function(s). In some alternativeimplementations, the functions noted in the blocks may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present invention, as well as other variations thereof, means that aparticular feature, structure, characteristic, and so forth described inconnection with the embodiment is included in at least one embodiment ofthe present invention. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearindica s otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more e features, integers, steps, operations,elements, components and/or groups thereof.

Referring now to FIG. 9, a neural network processing system 900 isshown. The neural network processing system 900 includes a hardwareprocessor 902 and a memory 904. A battery-based neural network 906includes a set of input neurons 202, one or more sets of hidden neurons206, and a set of output neurons 208, with battery-controlled variableresistive weights 204 as described above. In addition, the neuralnetwork processing system 900 includes functional modules that may beimplemented as software that is stored in memory 904 and executed byprocessor 902. In alternative embodiments, the functional modules may beimplemented as one or more discrete hardware components in the form of,e.g., an application-specific integrated chip or field programmable gatearray.

For example, a training module 908 uses training data that is stored inthe memory 904 to train the battery-based neural network 906. As thetraining module 708 processes the training data, the training module 908determines errors between the neural network output and the expectedresults. These errors are used as a basis for updates to the weights 204of the battery-based neural network 906. A weight control module 910alters the resistance values of the weights 904 in the battery-basedneural network 906 as described above, issuing write and erase signalsto the weights 904 as needed.

Referring now to FIG. 10, an exemplary processing system 1000 is shownwhich may represent elements of the neural network processing system900. The processing system 1000 includes at least one processor (CPU)1004 operatively coupled to other components via a system bus 1002. Acache 1006, a Read Only Memory (ROM) 1008, a Random Access Memory (RAM)1010, an input/output (I/O) adapter 1020, a sound adapter 1030, anetwork adapter 1040, a user interface adapter 1050, and a displayadapter 1060, are operatively coupled to the system bus 1002.

A first storage device 1022 and a second storage device 1024 areoperatively coupled to system bus 1002 by the I/O adapter 1020. Thestorage devices 1022 and 1024 can be any of a disk storage device (e.g.,a magnetic or optical disk storage device), a solid state magneticdevice, and so forth. The storage devices 1022 and 1024 can be the sametype of storage device or different types of storage devices.

A speaker 1032 is operatively coupled to system bus 1002 by the soundadapter 1030. A transceiver 1042 is operatively coupled to system bus1002 by network adapter 1040. A display device 1062 is operativelycoupled to system bus 1002 by display adapter 1060.

A first user input device 1052, a second user input device 1054, and athird user input device 1056 are operatively coupled to system bus 1002by user interface adapter 1050. The user input devices 1052, 1054, and1056 can be any of a keyboard, a mouse, a keypad, an image capturedevice, a motion sensing device, a microphone, a device incorporatingthe functionality of at least two of the preceding devices, and soforth. Of course, other types of input devices can also be used, whilemaintaining the spirit of the present principles. The user input devices1052, 1054, and 1056 can be the same type of user input device ordifferent types of user input devices. The user input devices 1052,1054, and 1056 are used to input and output information to and fromsystem 1000.

Of course, the processing system 1000 may also include other elements(not shown), as readily contemplated by one of skill in the art, as wellas omit certain elements. For example, various other input devicesand/or output devices can be included in processing system 1000,depending upon the particular implementation of the same, as readilyunderstood by one of ordinary skill in the art. For example, varioustypes of wireless and/or wired input and/or output devices can be used.Moreover, additional processors, controllers, memories, and so forth, invarious configurations can also be utilized as readily appreciated byone of ordinary skill in the art. These and other variations of theprocessing system 1000 are readily contemplated by one of ordinary skillin the art given the teachings of the present principles providedherein.

Having described preferred embodiments of a system and method (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

The invention claimed is:
 1. A method for adjusting the electricalresistance of a controllable resistive element, comprising: determiningan amount of electrical resistance change for the controllable resistiveelement; determining a concentration difference for a charge carrier ionin a resistor layer of the controllable resistive element thatcorresponds to the electrical resistance change for the controllableresistive element; determining a duration and amplitude of a currentpulse that changes the charge carrier ion concentration by thedetermined difference; applying a positive or negative current pulse toa controllable resistive element for the determined duration, therebycausing charge carrier ions to travel through an electrolyte layer ofthe controllable resistive element, to or from the resistor layer; andwaiting a predetermined time before applying a read voltage to thecontrollable resistive element to allow charge carrier ions in theresistor layer to settle.
 2. The method of claim 1, wherein applying thepositive or negative current pulse comprises applying a current pulsebetween a write electrode of the controllable resistive element and theshared read/write electrode of the controllable resistive element todecrease the charge carrier ion concentration by the determineddifference.
 3. The method of claim 1, wherein applying the positive ornegative current pulse comprises applying a current pulse between awrite electrode of the controllable resistive element and the sharedread/write electrode of the controllable resistive element to increasethe charge carrier ion concentration by the determined difference. 4.The method of claim 1, wherein applying the positive or negative pulsecauses charge carrier ions to move from or to a reservoir layer.
 5. Themethod of claim 1, wherein the resistor layer is formed from alithium-containing material.
 6. The method of claim 5, wherein thelithium-containing material is selected from the group consisting ofLiCoO₂, LiNbO₃, LiMnO₂, LiV₂O₅, LiFePO₄, LiNi_(x)Mn_(y)Co_(z),V₂O₅—LiBO₂, Li₄Ti₅O₁₂, Li_(x)Al, Li_(x)C, and Li_(x)Si.
 7. The method ofclaim 1, wherein the electrolyte layer is formed from a materialselected from the group consisting of lithium phosphorous oxy-nitrideand an organic material-based electrolyte.
 8. The method of claim 1,wherein applying the positive or negative current pulse to thecontrollable resistive element causes charge carrier ions to travel fromor to a reservoir layer.
 9. The method of claim 8, wherein the reservoirlayer is formed from a lithium compound material selected from the groupconsisting of LiCoO₂, LiNbO₃, LiMnO₂, LiV₂O₅, LiFePO₄,LiNi_(x)Mn_(y)Co_(z), V₂O₅—LiBO₂, Li₄Ti₅O₁₂, Li₂TiO₃, Li_(x)Al, Li_(x)C,Li, and Li_(x)Si.